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LTC5531 データシートの表示(PDF) - Linear Technology

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LTC5531 Datasheet PDF : 12 Pages
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LTC5531
APPLICATIO S I FOR ATIO
Operation
The LTC5531 RF detector integrates several functions to
provide RF power detection over frequencies ranging from
300MHz to 7GHz. These functions include an internal fre-
quency compensated buffer amplifier, an RF Schottky di-
ode peak detector and level shift amplifier to convert the RF
input signal to DC and a delay circuit to avoid voltage tran-
sients at VOUT when powering up. The LTC5531 has both
shutdown and voltage offset adjustment capabilities.
Buffer Amplifier
The output buffer amplifier is capable of supplying typi-
cally 4mA into a load. The amplifier has a bandwidth of
2MHz and a fixed internal gain of two.
The VOS input controls the DC input voltage to the buffer
amplifier. VOS must be connected to ground if the DC
output voltage is not to be changed. The buffer is initially
trimmed to approximately 120mV with VOS connected to
ground.
The VOS pin is used to change the initial VOUT starting
voltage. This function enables the LTC5531 output to span
the input range of a variety of analog-to-digital converters.
VOUT will not change until VOS exceeds 120mV. The
voltage at VOUT for VOS 120mV and with no RF signal
present is:
VOUT = VOS
VOUT will exactly track VOS above 120mV.
RF Detector
The internal RF Schottky diode peak detector and level
shift amplifier converts the RF input signal to a low
frequency signal. The detector demonstrates excellent
efficiency and linearity over a wide range of input power.
The Schottky diode is biased at about 55µA and drives a
25pF internal peak detector capacitor.
Shutdown
The part is in shutdown mode when SHDN is low. The
supply current is reduced to < 2µA and VOUT is shorted to
ground via a 280resistor. When SHDN is asserted high,
the part is enabled after about 8µs.
Demo Board Schematic
C4 LTC5531ES6
RFIN
39pF
1
6
RFIN VCC
R1
(OPT)
22k
VCC
2
5
GND VOUT
3
4
SHDN VOS
VOS
SHDN
C2
100pF
VCC
2.7V TO 6V
C1
0.1µF
VOUT
C3
(OPT)
5531 DB
5531f
9

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