LX5510(2003) データシートの表示（PDF） - Microsemi Corporation
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LX5510 Datasheet PDF : 7 Pages
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INTEGRATED PRODUCTS
CONFIDENTIAL
LX5510
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
PRELIMINARY DATA SHEET
ABSOLUTE MAXIMUM RATINGS
DC Supply Voltage, RF off ...............................................................................6V
Collector Current ........................................................................................400mA
Total Power Dissipation....................................................................................2W
RF Input Power........................................................................................... 15dBm
Maximum Junction Temperature (TJ max) .................................................. 150°C
Operation Ambient Temperature ...................................................-40°C to +85°C
Storage Temperature....................................................................-60°C to +150°C
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal.
x denotes respective pin designator 1, 2, or 3
PACKAGE PIN OUT
VC2
RF OUT
RF OUT
GND
13 14 15 16
12
*1
11
2
10
3
9
4
87 65
GND
RF IN
RF IN
GND
* Pad is Ground
LQ PACKAGE
(Bottom View)
Name
FUNCTIONAL PIN DESCRIPTION
Description
RF IN
VB1
VB2
VCC
RF OUT
VC1
VC2
GND
RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first
stage.
Bias current control voltage for the first stage.
Bias current control voltage for the second stage. The VB2 pin can be connected with the first stage control
voltage (VB1) into a single reference voltage (referred to as Vref) through an external resistor bridge.
Supply voltage for the bias reference and control circuits. This pin can be combined with both VC1 and VC2
pins, resulting in a single supply voltage (referred to as Vc).
RF output for the power amplifier.
Power supply for first stage amplifier. The VC1 feedline should be terminated with a 4pF bypass capacitor 50mil
apart from the device, followed by a 8.2nH blocking inductor at the supply side. This pin can be combined with
VC2 and VCC pins, resulting in a single supply voltage (referred to as Vc).
Power supply for second stage amplifier. The VC2 feedline should be driven with a 8.2nH AC blocking inductor
and 1uF bypass capacitor. This pin can be combined with VC1 and VCC pins, resulting in a single supply
voltage (referred to as Vc).
The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power
amplifier.
Copyright 2003
Rev. 0.3g, 2003-05-08
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
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