LX8942IDT データシートの表示（PDF） - Microsemi Corporation

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LX8942IDT

Low Dropout Dual Regulator

Microsemi Corporation 

LX8942

TM

®

Low Dropout Dual Regulator

PRODUCTION DATA SHEET

ELECTRICAL CHARACTERISTICS

Unless otherwise specified, the following specifications apply over the operating ambient temperature 0°C ≤ TA ≤ 70°C except where

otherwise noted and the following test conditions: TA = 25°C, VIN = 14V, IO1 = 50mA for VOUT1 and 10mA for VSB and are for DC

characteristics only. Low duty cycle pulse testing techniques are used which maintains junction and case temperatures equal to the

ambient temperature.

Parameter

Symbol

Test Conditions

` VOLTAGE OUTPUT (VOUT1) SECTION

Output Voltage (NOTE 1)

VOUT1

Line Regulation

Load Regulation

Output Impedance

Quiescent Current

9V < VIN < 26V, IO1 < 1000mA

9V < VIN < 16V, IO1 = 5mA

9V < VIN < 26V, IO1 = 5mA

5mA < IO1 < 1000mA

500mADC and 10mARMS, 100Hz – 10kHz

IO1 < 10mA, No Load on Standby

IO1 = 500mA, No Load on Standby

IO1 = 750mA, No Load on Standby

Output Noise Voltage

10Hz – 100kHz

Long Term Stability

Ripple Rejection

Dropout Voltage

Current Limit

Maximum Operational Input

Voltage

VIN

Maximum Line Transient

VIN

ON / OFF Switch

IIH

ON / OFF Switch

IIL

` STANDBY OUTPUT (VSB) SECTION

Output Voltage (Note 1)

VSB

Line Regulation

Load Regulation

Output Impedance

Quiescent Current

Output Noise Voltage

FO1 = 120Hz

IO1 = 500mA

IO1 = 1000mA

Double Battery

VO1 < 9V

IO1 = 10mA, Pin 4 = 2.4V

IO1 = 10mA, Pin 4 = 0.4V

6V < VIN < 26V, ISB < 60mA

6V < VIN < 26V

1mA < ISB < 35mA

1mA < ISB < 60mA

1mADC and 1mARMS, 100Hz – 10kHz

ISB < 10mA, VOUT1 OFF

10Hz – 100kHz

Long Term Stability

Ripple Rejection

Dropout Voltage

Current Limit

FSB = 120Hz

ISB < 60mA

Maximum Line Transient

VIN

4.75V < VSB < 6V

Note 1: The Temperature Extremes are Guaranteed but not 100% Production Tested.

LX8942

Units

Min Typ Max

7.6 8.0 8.4

V

4

25 mV

10 50 mV

10 50 mV

200

mΩ

2

mA

40 100 mA

90

mA

100

µVRMS

20

mV /

1000hr

66

dB

0.45 0.60 V

0.7 1.2

V

1.0 1.8

A

26.5 31

V

60

70

V

10 µA

-10

µA

4.75 5.0 5.25 V

4

50 mV

10 25 mV

25 50 mV

1

Ω

1.2

3

mA

300

µVRMS

20

mV /

1000hr

66

dB

0.55 0.70 V

60 100

mA

60

70

V

Copyright © 2005

Rev. 1.2, 2006-01-20

Microsemi

Integrated Products Division

11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

Page 3

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