M02N60B データシートの表示（PDF） - STANSON TECHNOLOGY
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M02N60B Datasheet PDF : 5 Pages
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N Channel MOSFET
2.0A
M02N60B
PIN CONFIGURATION
123
1.Gate 2.Drain 3.Source
ABSOLUTE MAXIMUM RATINGS
FEATURE
Robust High Voltage Temination.
Avalanche Energy Specified
Source-to Drain Diode Recovery Time
Comparable to a Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge
Circurits
IDSS and VDS(on) Specified at Elevated
Temperature
RATING
SYMBOL VALUE UNIT
Drain to Current - Continuous
- Pulsed
ID
2.0
A
IDM
9.0
Gate-to-Source Voltage – Continue
- Non-repetitive
VGS
+/-20
V
VGSM
+/-40
V
Total Power Dissipation
TO-251/252
TO-220
Operating and Storage Temperature Range
PD
W
60
60
TJ, TSTG -55 to 150 ℃
Single Pulse Drain-to-Source Avalanche Energy – Tj = 25℃
EAS
(VDD =100V, VGS = 10V, IAS = 2A, L = 10mH, RG = 25Ω)
Thermal Resistance – Junction to Case
θJC
- Junction to Ambient
θJA
Maximum Lead Temperature for Soldering Purposes, 1/8’’ form 10 seconds TL
20
mJ
1.0
℃/W
62.5
260
℃
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
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