M02N60B データシートの表示（PDF） - STANSON TECHNOLOGY
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M02N60B Datasheet PDF : 5 Pages
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N Channel MOSFET
2.0A
M02N60B
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃）
PARAMETERS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current-
Forward
Gate Threshhold Voltage
Drain-Source On-Resistance
SYMBO MIN TYP MAX UNIT
L
V(BR)DSS 600
Vdc
CONDITION
VGS=0, ID=250uA
IDSS
IGSSF
0.1 mA
1.0 mA
100 nA
VDS=600V, VGS=0
VDS=480V, VGS=0, Tj=125℃
VGSF=20V, VDS=0
VGS(th) 2.0
RDS(on)
4.0 V
4.4 Ohm
VDS=VGS, ID=250uA
VGS=10V, ID=1.2A*
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-Off Delay Time
Ciss
Coss
Crss
td(on)
Td(off)
435
pF
56
pF VDS=25V, VGS=0, f=1 MHz
9.2
pF
12
nS
30
nS
VDD=300V, ID=2.0A,
Rise Time
tr
21
nS
VGS=10V, RG=18Ω
Fall Time
tf
24
nS
Total Gate Charge
Gate-Drain Charge
Qg
13 22 nC
Qgd
6.0
nC
VDS=400V, ID=2.0A
Gate-Drain Charge
Qgs
2.0
nC
VGS=10V*
Intemal Drain Inductance
Internal Drain Inductance
LD
4.5
nH Measured from the drain lead
0.25’’ From package to center
of die
Ls
7.5
nH Measured from the sorce lead
0.25’’ form package to source
bond pad
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward On-Voltage(1)
Forward Tum Time
Reverse Recovery Time
VDS
ton
trr
1.5 V
**
nS
340
nS
Is=2.0A, VGS=0V
dIS/dt = 100A/μS
*Pulse Test: Pulse Width ≦300μS, Duty Cycle ≦ 2%
**Negligible, Dominated by circuit inductance
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294 FAX: (650) 9389295
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