M1MA141WAT1G(2004) データシートの表示（PDF） - ON Semiconductor
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M1MA141WAT1G Datasheet PDF : 4 Pages
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M1MA141WAT1,
M1MA142WAT1
Preferred Device
Common Anode Silicon
Dual Switching Diode
This Common Anode Silicon Epitaxial Planar Dual Diode is
designed for use in ultra high speed switching applications. This
device is housed in the SC−70 package which is designed for low
power surface mount applications.
Features
• Pb−Free Package is Available
• Fast trr, < 10 ns
• Low CD, < 15 pF
• Available in 8 mm Tape and Reel
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Reverse Voltage
M1MA141WAT1 VR
M1MA142WAT1
40
Vdc
80
Peak Reverse Voltage M1MA141WAT1 VRM
M1MA142WAT1
40
Vdc
80
Forward Current
Single
Dual
IF
100
mAdc
150
Peak Forward Current Single
Dual
IFM
225
mAdc
340
Peak Forward Surge
Current
Single
Dual
IFSM
500
mAdc
(Note 1)
750
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Power Dissipation
Junction Temperature
Storage Temperature
1. t = 1 sec
PD
150
mW
TJ
150
°C
Tstg
−55 ~ + 150 °C
http://onsemi.com
ANODE
3
1
2
CATHODE
MARKING
3
DIAGRAM
1
2
xxM
SC−70 (SOT−323)
CASE 419
Style 4
xx
= MN for 141
= MO for 142
M
= Date Code
ORDERING INFORMATION
Device
Package
Shipping†
M1MA141WAT1 SC−70 3000/Tape & Reel
M1MA141WAT1G SC−70
(Pb−Free)
M1MA142WAT1 SC−70
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2004
1
July, 2004 − Rev. 7
Publication Order Number:
M1MA141WAT1/D
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