SST29EE512(2005) データシートの表示（PDF） - Silicon Storage Technology
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SST29EE512 Datasheet PDF : 26 Pages
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Data Sheet
AC CHARACTERISTICS
512 Kbit Page-Write EEPROM
SST29EE512
TABLE 9: READ CYCLE TIMING PARAMETERS FOR SST29EE512
Symbol Parameter
Min
Max
Units
TRC
Read Cycle Time
70
ns
TCE
Chip Enable Access Time
70
ns
TAA
Address Access Time
70
ns
TOE
TCLZ1
TOLZ1
TCHZ1
TOHZ1
TOH1
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
30
ns
0
ns
0
ns
20
ns
20
ns
0
ns
T9.3 1060
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 10: PAGE-WRITE CYCLE TIMING PARAMETERS
Symbol
Parameter
Min
Max
Units
TWC
Write Cycle (Erase and Program)
TAS
Address Setup Time
TAH
Address Hold Time
10
ms
0
ns
50
ns
TCS
TCH
TOES
WE# and CE# Setup Time
WE# and CE# Hold Time
OE# High Setup Time
0
ns
0
ns
0
ns
TOEH
TCP
TWP
OE# High Hold Time
CE# Pulse Width
WE# Pulse Width
0
ns
70
ns
70
ns
TDS
TDH1
TBLC1
TBLCO1
TIDA1
TSCE
Data Setup Time
Data Hold Time
Byte Load Cycle Time
Byte Load Cycle Time
Software ID Access and Exit Time
Software Chip-Erase
35
ns
0
ns
0.05
100
µs
200
µs
10
µs
20
ms
T10.6 1060
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2005 Silicon Storage Technology, Inc.
10
S71060-09-000
9/05
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