SST29EE512 データシートの表示（PDF） - Silicon Storage Technology
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SST29EE512 Datasheet PDF : 26 Pages
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512 Kbit Page-Mode EEPROM
SST29EE512 / SST29LE512 / SST29VE512
Data Sheet
TABLE 5: DC OPERATING CHARACTERISTICS VDD = 5.0V±10% FOR SST29EE512
Limits
Symbol Parameter
Min Max Units Test Conditions
IDD
Power Supply Current
Read
Write
ISB1
Standby VDD Current
(TTL input)
Address input=VIL/VIH, at f=1/TRC Min,
VDD=VDD Max
30 mA CE#=OE#=VIL, WE#=VIH, all I/Os open
50 mA CE#=WE#=VIL, OE#=VIH, VDD=VDD Max
3
mA CE#=OE#=WE#=VIH, VDD=VDD Max
ISB2
Standby VDD Current
(CMOS input)
50
µA CE#=OE#=WE#=VDD -0.3V, VDD=VDD Max
ILI
Input Leakage Current
ILO
Output Leakage Current
VIL
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
VOH
Output High Voltage
1
µA VIN=GND to VDD, VDD=VDD Max
10
µA VOUT=GND to VDD, VDD=VDD Max
0.8
V VDD=VDD Min
2.0
V VDD=VDD Max
0.4
V IOL=2.1 mA, VDD=VDD Min
2.4
V IOH=-400 µA, VDD=VDD Min
T5.1 301
TABLE 6: DC OPERATING CHARACTERISTICS VDD = 3.0-3.6V FOR SST29LE512 AND 2.7-3.0V FOR SST29VE512
Limits
Symbol Parameter
IDD
Power Supply Current
Read
Write
ISB1
Standby VDD Current
(TTL input)
ISB2
Standby VDD Current
(CMOS input)
Min Max Units Test Conditions
Address input=VIL/VIH, at f=1/TRC Min,
VDD=VDD Max
12 mA CE#=OE#=VIL, WE#=VIH, all I/Os open
15 mA CE#=WE#=VIL, OE#=VIH, VDD=VDD Max
1
mA CE#=OE#=WE#=VIH, VDD=VDD Max
15
µA CE#=OE#=WE#=VDD -0.3V, VDD=VDD Max
ILI
Input Leakage Current
ILO
Output Leakage Current
VIL
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
VOH
Output High Voltage
1
µA VIN=GND to VDD, VDD=VDD Max
10
µA VOUT=GND to VDD, VDD=VDD Max
0.8
V VDD=VDD Min
2.0
V VDD=VDD Max
0.4
V IOL=100 µA, VDD=VDD Min
2.4
V IOH=-100 µA, VDD=VDD Min
T6.2 301
©2001 Silicon Storage Technology, Inc.
8
S71060-06-000 6/01 301
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