M29F400 データシートの表示（PDF） - STMicroelectronics

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M29F400

4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory

STMicroelectronics 

M29F400BT

M29F400BB

4 Mbit (512Kb x8 or 256Kb x16, Boot Block)

single supply Flash memory

Features

■ Single 5 V ± 10% supply voltage for program,

erase and read operations

■ Access time: 45 ns

■ Programming time

– 8 µs per Byte/Word typical

■ 11 memory blocks

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 8 Main Blocks

■ Program/erase controller

– Embedded Byte/Word Program algorithm

– Embedded Multi-Block/Chip Erase

algorithm

– Status Register Polling and Toggle Bits

– Ready/Busy Output Pin

■ Erase Suspend and Resume modes

– Read and Program another Block during

Erase Suspend

■ Unlock Bypass Program command

– Faster Production/Batch Programming

■ Temporary block unprotection mode

■ Low power consumption

– Standby and Automatic Standby

■ 100,000 program/erase cycles per block

■ 20-year data retention

– Defectivity below 1 ppm/year

TSOP48 (N)

12 x 20mm

44

1

SO44 (M)

■ Electronic signature

– Manufacturer Code: 0020h

– Top Device Code M29F400BT: 00D5h

– Bottom Device Code M29F400BB: 00D6h

■ ECOPACK® packages available

March 2007

Rev 5

1/40

www.st.com

1

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