M29W008EB データシートの表示（PDF） - STMicroelectronics

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M29W008EB

8 Mbit (1Mb x 8, Boot Block) 3V Supply Flash Memory

STMicroelectronics 

M29W008ET

M29W008EB

8 Mbit (1Mb x 8, Boot Block)

3V Supply Flash Memory

FEATURES SUMMARY

■ ACCESS TIMES: 70ns, 90ns

■ PROGRAMMING TIME: 10µs per Byte typical

■ PROGRAM/ERASE CONTROLLER (P/E.C.)

– Embedded Byte Program Algorithm

– Status Register bits and Ready/Busy

Output

■ 19 MEMORY BLOCKS

– 1 Boot Block (Top or Bottom location)

– 2 Parameter and 16 Main Blocks

■ BLOCK, MULTI-BLOCK and CHIP ERASE

■ MULTIPLE BLOCK PROTECTION/

TEMPORARY UNPROTECTION MODE

■ ERASE SUSPEND and RESUME MODES

■ LOW POWER CONSUMPTION

– Standby and Automatic Standby modes

■ 100,000 PROGRAM/ERASE CYCLES per

BLOCK

■ 20 YEARS DATA RETENTION

– Defectivity below 1ppm/year

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– M29W008ET Device Code: D2h

– M29W008EB Device Code: DCh

■ ECOPACK® TSOP40 PACKAGE

Figure 1. Package

TSOP40 (N)

10 x 20mm

June 2005

Rev 0.1

1/43

www.st.com

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