M29W160DB データシートの表示（PDF） - STMicroelectronics

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M29W160DB

16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory

STMicroelectronics 

M29W160DT

M29W160DB

16 Mbit (2Mb x8 or 1Mb x16, Boot Block)

3V Supply Flash Memory

PRELIMINARY DATA

FEATURES SUMMARY

s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for

PROGRAM, ERASE and READ OPERATIONS

s ACCESS TIME: 70ns

s PROGRAMMING TIME

– 10µs per Byte/Word typical

s 35 MEMORY BLOCKS

– 1 Boot Block (Top or Bottom Location)

– 2 Parameter and 32 Main Blocks

s PROGRAM/ERASE CONTROLLER

– Embedded Program and Erase algorithms

s ERASE SUSPEND and RESUME MODES

– Read and Program another Block during

Erase Suspend

s UNLOCK BYPASS PROGRAM COMMAND

– Faster Production/Batch Programming

s TEMPORARY BLOCK UNPROTECTION

MODE

s SECURITY MEMORY BLOCK

s LOW POWER CONSUMPTION

– Standby and Automatic Standby

s 100,000 PROGRAM/ERASE CYCLES per

BLOCK

s ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Top Device Code M29W160DT: 22C4h

– Bottom Device Code M29W160DB: 2249h

Figure 1. Packages

44

TSOP48 (N)

12 x 20mm

1

SO44 (M)

FBGA

LFBGA48 (ZA)

8 x 6 solder balls

January 2001

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

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