M29W320EB データシートの表示（PDF） - Numonyx -> Micron

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M29W320EB

32Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory

Numonyx -> Micron 

M29W320ET

M29W320EB

32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block)

3V supply Flash memory

Features

■ Supply voltage

– VCC = 2.7V to 3.6V for Program, Erase and

Read

– VPP =12V for Fast Program (optional)

■ Access times: 70, 90ns

■ Programming time

– 10µs per byte/word typical

– Double word/ Quadruple byte Program

■ Memory Blocks

– Memory Array: 63 Main Blocks

– 8 Parameter Blocks (Top or Bottom

Location)

■ Erase Suspend and Resume modes

– Read and Program another Block during

Erase Suspend

■ Unlock Bypass Program command

– Faster Production/Batch Programming

■ VPP/WP pin for fast Program and Write Protect

■ Temporary Block Unprotection mode

■ Common Flash Interface

– 64 bit Security code

■ Extended memory Block

– Extra block used as security block or to

store additional information

■ Low power consumption

– Standby and Automatic Standby

■ 100,000 Program/Erase cycles per block

■ Electronic signature

– Manufacturer code: 0020h

– Top Device code M29W320ET: 2256h

– Bottom Device code M29W320EB: 2257h

■ ECOPACK® packages available

TSOP48 (N)

12 x 20mm

FBGA

TFBGA48 (ZE)

6 x 8mm

March 2008

Rev 6

1/63

www.numonyx.com

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