M36DR432CZA データシートの表示（PDF） - STMicroelectronics

部品番号

コンポーネント説明

メーカー

M36DR432CZA

32 Mbit (2Mb x16, Dual Bank, Page) Flash Memory and 4 Mbit (256K x16) SRAM, Multiple Memory Product

STMicroelectronics 

M36DR432C, M36DR432D

Table 2. Absolute Maximum Ratings (1)

Symbol

Parameter

Value

Unit

TA

Ambient Operating Temperature (3)

–40 to 85

°C

TBIAS

Temperature Under Bias

–40 to 125

°C

TSTG

Storage Temperature

–55 to 150

°C

VIO (2)

Input or Output Voltage

–0.2 to VDD(4) + 0.3

V

VDDF

Flash Chip Supply Voltage

–0.5 to 2.7

V

VDDS

SRAM Chip Supply Voltage

–0.2 to 2.6

V

VPPF

Program Voltage

–0.5 to 13.0

V

Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may

cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions

above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-

tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-

ity documents.

2. Minimum voltage may undershoot to –2V during transition and for less than 20ns.

3. Depends on range.

4. VDD = VDDS = VDDF.

Figure 4. Functional Block Diagram

VDDF

VPPF

EF

GF

WF

RPF

WPF

A18-A20

A0-A17

Flash Memory

32 Mbit (x16)

VDDS

VSSF

DQ0-DQ15

E1S

E2S

GS

WS

UBS

LBS

4/46

SRAM

4 Mbit (x16)

VSSS

AI90205

Share Link: