M36W108 PDF VIEW DOWNLOAD, M36W108 データシート

M36W108 データシートの表示（PDF） - STMicroelectronics

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M36W108

8 Mbit (1Mb x8, Boot Block) Flash Memory and 1 Mbit (128Kb x8) SRAM Low Voltage Multi-Memory Product

STMicroelectronics

M36W108 Datasheet PDF : 35 Pages

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M36W108T, M36W108B

Table 3. Main Operation Modes (1)

Operation Mode

E1S

E2S

DQ0-DQ7

Flash Chip Read

VIL

VIH

VIL

VIH

Data Output

VIL

VIH

Data Output

SRAM Chip Read

VIH

VIL

VIH

VIL

VIH

Data Output

Flash Chip Write

VIL

VIH

VIL

VIH

Data Input

VIL

VIH

VIL

VIH

Data Input

SRAM Chip Write

VIH

VIL

VIH

VIL

Data Input

VIH

Flash Chip Output Disable

VIL

VIH

Hi-Z

SRAM Chip Output Disable

VIH

VIL

VIH

Hi-Z

Flash Chip Stand-by

VIH

Hi-Z

Flash Chip Reset

VIH

VIL

Hi-Z

SRAM Chip Stand-by

VIH

VIL

Hi-Z

Note: 1. X = VIL or VIH.

Reset Input (RP). The Reset input provides

hardware reset of the Flash chip. Reset of the

Flash memory is achieved by pulling RP to VIL for

at least tPLPX. When the reset pulse is given, if the

Flash memory is in Read or Standby modes, it will

be available for new operations in tPHEL after the

rising edge of RP.

If the Flash memory is in Erase or Program mode

the reset will take tPLYH during which the Ready/

Busy (RB) signal will be held at VIL. The end of the

Flash memory reset will be indicated by the rising

edge of RB. A hardware reset during an Erase or

Program operation will corrupt the data being pro-

grammed or the block(s) being erased. See Table

17 and Figure 9.

Ready/Busy Output (RB). Ready/Busy is an

open-drain output of the Flash chip. It gives the in-

ternal state of the Program/Erase Controller (P/

E.C.) of the Flash device. When RB is Low, the

Flash device is busy with a Program or Erase op-

eration and it will not accept any additional pro-

gram or erase instructions except the Erase

Suspend instruction. When RB is High, the Flash

device is ready for any Read, Program or Erase

operation. The RB will also be High when the

Flash memory is put in Erase Suspend or Standby

modes.

VCCF Supply Voltage. Flash memory power sup-

ply for all operations (Read, Program and Erase).

VCCS Supply Voltage. SRAM power supply for

all operations (Read, Program).

VSS Ground. VSS is the reference for all voltage

measurements.

POWER SUPPLY

Power Up. The Flash memory Command Inter-

face is reset on power up to Read Array. Either

Flash Chip Enable (EF) or Write Enable (W) inputs

must be tied to VIH during Power Up to allow max-

imum security and the possibility to write a com-

mand on the first rising edge of EF and W. Any

write cycle initiation is blocked when VCCF is below

VLKO.

Supply Rails. Normal precautions must be taken

for supply voltage decoupling; each device in a

system should have the VCCF, VCCS rails decou-

pled with a 0.1µF capacitor close to the VCCF,

VCCS and VSS pins. The PCB trace widths should

be sufficient to carry the VCCF and VCCS program

currents and the VCCF erase current required.

4/35

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