M36W416BG データシートの表示（PDF） - STMicroelectronics

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M36W416BG

16 Mbit (1Mb x16, Boot Block) Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product

STMicroelectronics 

M36W416TG, M36W416BG

Table 6. DC Characteristics

Symbol

Parameter

Device

Test Condition

Min Typ Max Unit

ILI Input Leakage Current

Flash & SRAM

0V ≤ VIN ≤ VDDQF

±1 µA

ILO Output Leakage Current

Flash

SRAM

0V ≤ VOUT ≤ VDDQF

0V ≤ VOUT ≤ VDDQF,

SRAM Outputs Hi-Z

±10 µA

±1 µA

Flash

EF = VDDQF ± 0.2V

RPF = VDDQ ± 0.2V

15

50 µA

IDDS VDD Standby Current

SRAM

E1S ≥ VDDS – 0.2V

VIN ≥ VDDS – 0.2V or VIN

≤ 0.2V

f = fmax (A0-A17 and DQ0-

DQ15 only)

f = 0 (GS, WS, UBS and LBS)

7

15 µA

E1S ≥ VDDS – 0.2V

VIN ≥ VDDS – 0.2V or

VIN ≤ 0.2V, f = 0

7

15 µA

IDDD Supply Current (Reset)

Flash

RPF = VSSF ± 0.2V

15

50 µA

IDD Supply Current

SRAM

f = fmax = 1/AVAV,

VIN ≤ 0.2V, IOUT = 0 mA

f = 1MHz,

VIN ≤ 0.2V, IOUT = 0 mA

5.5 12 mA

1.5

3 mA

IDDR Supply Current (Read)

Flash

EF = VIL, GF = VIH, f = 5 MHz

10

20 mA

IDDW Supply Current (Program)

Flash

Program in progress

VPPF = 12V ± 5%

Program in progress

VPPF = VDDF

10

20 mA

10

20 mA

IDDE Supply Current (Erase)

Flash

Erase in progress

VPPF = 12V ± 5%

Erase in progress

VPPF = VDDF

5

20 mA

5

20 mA

IDDES

Supply Current

(Program/Erase Suspend)

Flash

EF = VDDQF ± 0.2V,

Erase suspended

50 µA

IPP1

Program Current

(Read or Standby)

Flash

VPPF > VDDF

400 µA

IPP2

Program Current

(Read or Standby)

Flash

VPPF ≤ VDDF

5

µA

IPPR Program Current (Reset)

Flash

RPF = VSSF ± 0.2V

5

µA

IPPW

Program Current

(Program)

Flash

VPPF = 12V ± 0.5V

Program in progress

VPPF = VDDF

Program in progress

10 mA

5 mA

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