M36W416BG データシートの表示（PDF） - STMicroelectronics

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M36W416BG

16 Mbit (1Mb x16, Boot Block) Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product

STMicroelectronics 

M36W416TG, M36W416BG

Symbol

Parameter

Device

IPPE Program Current (Erase)

Flash

VIL Input Low Voltage

VIH Input High Voltage

Flash & SRAM

Flash & SRAM

VOL Output Low Voltage

Flash & SRAM

VOH Output High Voltage

Flash & SRAM

VPP1

Program Voltage

(Program or Erase

operations)

Program Voltage

VPPFH (Program or Erase

operations)

Program Voltage

VPPLK (Program and Erase lock-

out)

VLKO

VDDF Supply Voltage

(Program and Erase lock-

out)

Flash

Flash

Flash

Flash

Test Condition

VPPF = 12V ± 0.5V

Erase in progress

VPPF = VDDF

Erase in progress

VDDQF = VDDS ≥ 2.7V

VDDQF = VDDS ≥ 2.7V

VDDQF = VDDS = VDD min

IOL = 100µA

VDDQF = VDDS = VDD min

IOH = –100µA

Min Typ Max Unit

10 mA

–0.3

0.7

VDDQF

VDDQ

–0.1

5

µA

0.8

V

VDDQF

+0.3

V

0.1 V

V

1.65

3.6 V

11.4

12.6 V

1

V

2

V

14/62

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