M36W416BG データシートの表示（PDF） - STMicroelectronics

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M36W416BG

16 Mbit (1Mb x16, Boot Block) Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product

STMicroelectronics 

M36W416TG

M36W416BG

16 Mbit (1Mb x16, Boot Block) Flash Memory

and 4Mbit (256Kb x16) SRAM, Multiple Memory Product

PRELIMINARY DATA

FEATURES SUMMARY

s MULTIPLE MEMORY PRODUCT

– 16 Mbit (1Mb x 16) Boot Block Flash Memory

– 4 Mbit (256Kb x 16) SRAM

s SUPPLY VOLTAGE

– VDDF = VDDS = 2.7V to 3.3V

– VDDQF = VDDS = 2.7V to 3.3V

– VPPF = 12V for Fast Program (optional)

s ACCESS TIME: 70ns, 85ns

s LOW POWER CONSUMPTION

s ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M36W416TG: 88CEh

– Bottom Device Code, M36W416BG: 88CFh

FLASH MEMORY

s MEMORY BLOCKS

– Parameter Blocks (Top or Bottom location)

– Main Blocks

s PROGRAMMING TIME

– 10µs typical

– Double Word Programming Option

s BLOCK LOCKING

– All blocks locked at Power up

– Any combination of blocks can be locked

– WPF for Block Lock-Down

s AUTOMATIC STAND-BY MODE

s PROGRAM and ERASE SUSPEND

s 100,000 PROGRAM/ERASE CYCLES per

BLOCK

s COMMON FLASH INTERFACE

– 64 bit Security Code

s SECURITY

– 64 bit user programmable OTP cells

– 64 bit unique device identifier

– One parameter block permanently lockable

SRAM

s 4 Mbit (256Kb x 16)

s ACCESS TIME: 70ns

s LOW VDDS DATA RETENTION: 1.5V

s POWER DOWN FEATURES USING TWO

CHIP ENABLE INPUTS

Figure 1. Packages

FBGA

Stacked LFBGA66 (ZA)

12 x 8mm

November 2002

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

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