M36W832BE データシートの表示（PDF） - STMicroelectronics

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M36W832BE

32 Mbit (2Mb x16, Boot Block) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multiple Memory Product

STMicroelectronics 

M36W832TE

M36W832BE

32 Mbit (2Mb x16, Boot Block) Flash Memory

and 8 Mbit (512Kb x16) SRAM, Multiple Memory Product

FEATURES SUMMARY

s SUPPLY VOLTAGE

– VDDF = 2.7V to 3.3V

– VDDS = VDDQF = 2.7V to 3.3V

– VPPF = 12V for Fast Program (optional)

s ACCESS TIMES: 70ns and 85ns

s LOW POWER CONSUMPTION

s ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M36W832TE: 88BAh

– Bottom Device Code, M36W832BE: 88BBh

FLASH MEMORY

s 32 Mbit (2Mb x16) BOOT BLOCK

– 8 x 4 KWord Parameter Blocks (Top or

Bottom Location)

s PROGRAMMING TIME

– 10µs typical

– Double Word Programming Option

– Quadruple Word Programming Option

s BLOCK LOCKING

– All blocks locked at Power up

– Any combination of blocks can be locked

– WPF for Block Lock-Down

s AUTOMATIC STANDBY MODE

s PROGRAM and ERASE SUSPEND

s 100,000 PROGRAM/ERASE CYCLES per

BLOCK

s COMMON FLASH INTERFACE

s SECURITY

– 128 bit user programmable OTP cells

– 64 bit unique device identifier

Figure 1. Packages

FBGA

Stacked LFBGA66 (ZA)

12 x 8mm

SRAM

s 8 Mbit (512Kb x 16)

s ACCESS TIME: 70ns

s LOW VDDS DATA RETENTION: 1.5V

s POWER DOWN FEATURES USING TWO

CHIP ENABLE INPUTS

May 2003

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