M36W832BE データシートの表示（PDF） - STMicroelectronics

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M36W832BE

32 Mbit (2Mb x16, Boot Block) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multiple Memory Product

STMicroelectronics 

M36W832TE, M36W832BE

DC AND AC PARAMETERS

This section summarizes the operating and mea-

surement conditions, and the DC and AC charac-

teristics of the device. The parameters in the DC

and AC characteristics Tables that follow, are de-

rived from tests performed under the Measure-

ment Conditions summarized in Table 13,

Operating and AC Measurement Conditions. De-

signers should check that the operating conditions

in their circuit match the measurement conditions

when relying on the quoted parameters.

The operating and AC measurement parameters

given below (see Table 13, Operating and AC

Measurement Conditions) are those of the stand-

alone Flash and SRAM devices and some differ

from those of the stacked product.

Table 13. Operating and AC Measurement Conditions

SRAM

Parameter

70

Min

Max

VDDF Supply Voltage

–

–

VDDQF Supply Voltage

–

–

VDDS Supply Voltage

2.7

3.3

Ambient Operating Temperature

– 40

85

Load Capacitance (CL)

50

Input Rise and Fall Times

3.3

Input Pulse Voltages

0 to VDDQF

Input and Output Timing Ref. Voltages

VDDQF/2

Flash Memory

70 / 85

Min

Max

2.7

3.6

2.7

3.6

–

–

– 40

85

50

5

0 to VDDQF

VDDQF/2

Units

V

V

V

°C

pF

ns

V

V

Figure 8. AC Measurement I/O Waveform

VDDQ

0V

Note: VDDQ means VDDQF = VDDS

VDDQ/2

AI90166

Figure 9. AC Measurement Load Circuit

VDDQF

VDDQF

VDDF

0.1µF

0.1µF

DEVICE

UNDER

TEST

25kΩ

CL

25kΩ

Table 14. Device Capacitance

Symbol

Parameter

CIN

Input Capacitance

COUT

Output Capacitance

Note: Sampled only, not 100% tested.

CL includes JIG capacitance

AI90167

Test Condition

VIN = 0V, f=1 MHz

VOUT = 0V, f=1 MHz

Max

12

16

Unit

pF

pF

27/64

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