M36W832BE データシートの表示（PDF） - STMicroelectronics

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M36W832BE

32 Mbit (2Mb x16, Boot Block) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multiple Memory Product

STMicroelectronics 

Symbol

Parameter

IPPE

Program Current

(Erase)

VIL Input Low Voltage

VIH Input High Voltage

VOL Output Low Voltage

VOH Output High Voltage

VPPL

Program Voltage

(Program or Erase

operations)

VPPH

Program Voltage

(Program or Erase

operations)

Program Voltage

VPPLK (Program and Erase

lock-out)

VLKO

VDDF Supply Voltage

(Program and Erase

lock-out)

Device

Flash

Flash &

SRAM

Flash &

SRAM

Flash &

SRAM

Flash &

SRAM

Flash

Flash

Flash

Flash

M36W832TE, M36W832BE

Test Condition

Erase in progress

VPPF = 12V ± 5%

Erase in progress

VPPF = VDDF

VDDQF = VDDS ≥ 2.7V

VDDQF = VDDS ≥ 2.7V

VDDQF = VDDS = VDD min

IOL = 100µA

VDDQF = VDDS = VDD min

IOH = –100µA

Min Typ Max Unit

3

10 mA

1

5

µA

–0.3

0.7VDD

QF

0.8

V

VDDQF

+0.4

V

0.1

V

2.4

V

1.65

3.6

V

11.4

12.6 V

1

V

2

V

29/64

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