M36WT864 データシートの表示（PDF） - STMicroelectronics

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M36WT864

64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512K x16) SRAM, Multiple Memory Product

STMicroelectronics 

M36WT864TF, M36WT864BF

vice. It is the main power supply for all Flash oper-

ations (Read, Program and Erase).

VDDQF and VDDS Supply Voltage. VDDQF pro-

vides the power supply for the Flash memory I/O

pins and VDDS provides the power supply for the

SRAM control and I/O pins. This allows all Outputs

to be powered independently from the Flash core

power supply, VDDF. VDDQF can be tied to VDDS or

it can use a separate supply.

VPPF Program Supply Voltage. VPPF is both a

Flash control input and a Flash power supply pin.

The two functions are selected by the voltage

range applied to the pin.

If VPPF is kept in a low voltage range (0V to VDDQF)

VPPF is seen as a control input. In this case a volt-

age lower than VPPLKF gives an absolute protec-

tion against program or erase, while VPPF > VPP1F

enables these functions (see Tables 18 and 19,

DC Characteristics for the relevant values). VPPF

is only sampled at the beginning of a program or

erase; a change in its value after the operation has

started does not have any effect and program or

erase operations continue.

If VPPF is in the range of VPPHF it acts as a power

supply pin. In this condition VPPF must be stable

until the Program/Erase algorithm is completed.

VSSF ,VSSQF and VSSS Grounds. VSSF, VSSQF

and VSSS are the ground references for all voltage

measurements in the Flash (core and I/O Buffers)

and SRAM chips, respectively.

Note: Each device in a system should have

VDDF and VPPF decoupled with a 0.1µF ceramic

capacitor close to the pin (high frequency, in-

herently low inductance capacitors should be

as close as possible to the package). See Fig-

ure 10, AC Measurement Load Circuit. The

PCB trace widths should be sufficient to carry

the required VPPF program and erase currents.

10/92

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