M36WT864 データシートの表示（PDF） - STMicroelectronics

部品番号

コンポーネント説明

メーカー

M36WT864

64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512K x16) SRAM, Multiple Memory Product

STMicroelectronics 

M36WT864TF

M36WT864BF

64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory

and 8 Mbit (512K x16) SRAM, Multiple Memory Product

PRODUCT PREVIEW

FEATURES SUMMARY

s SUPPLY VOLTAGE

– VDDF = 1.65V to 2.2V

– VDDS = VDDQF = 2.7V to 3.3V

– VPPF = 12V for Fast Program (optional)

s ACCESS TIME: 70, 85, 100ns

s LOW POWER CONSUMPTION

s ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M36WT864TF: 8810h

– Bottom Device Code, M36WT864BF: 8811h

FLASH MEMORY

s PROGRAMMING TIME

– 8µs by Word typical for Fast Factory Program

– Double/Quadruple Word Program option

– Enhanced Factory Program options

s MEMORY BLOCKS

– Multiple Bank Memory Array: 4 Mbit Banks

– Parameter Blocks (Top or Bottom location)

s DUAL OPERATIONS

– Program Erase in one Bank while Read in

others

– No delay between Read and Write operations

s BLOCK LOCKING

– All blocks locked at Power up

– Any combination of blocks can be locked

– WP for Block Lock-Down

s SECURITY

– 128 bit user programmable OTP cells

– 64 bit unique device number

– One parameter block permanently lockable

s COMMON FLASH INTERFACE (CFI)

s 100,000 PROGRAM/ERASE CYCLES per

BLOCK

SRAM

s 8 Mbit (512K x 16 bit)

s EQUAL CYCLE and ACCESS TIMES: 70ns

s LOW STANDBY CURRENT

s LOW VDDS DATA RETENTION: 1.5V

s TRI-STATE COMMON I/O

s AUTOMATIC POWER DOWN

Figure 1. Packages

FBGA

Stacked LFBGA96 (ZA)

8 x 14mm

July 2002

This is preliminary information on a new product now in development. Details are subject to change without notice.

1/92

Share Link: