M36W0R5020B0 データシートの表示（PDF） - STMicroelectronics

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M36W0R5020B0

32 Mbit (2Mb x16, Multiple Bank, Burst) Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package

STMicroelectronics 

M36W0R5020T0, M36W0R5020B0

Table 10. SRAM Write AC Characteristics

Symbol

Alt

Parameter

tAVAV

tWC Write Cycle Time

tAVE1L,

tAVE2H,

tAVWL

tAVBL

tSA Address Valid to Beginning of Write

tAVWH

tAVE1H

tAVE2L

tAVBH

tAW Address Valid to Write Enable High

tBLWH

tBLE1H

tBLE2L

tBLBH

tBW UBS, LBS Valid to End of Write

tDVE1H,

tDVE2L,

tDVWH

tDVBH

tSD Input Valid to End of Write

tE1HAX,

tE2LAX,

tWHAX

tBHAX

tHA End of Write to Address Change

tE1HDX,

tE2LDX,

tWHDX

tBHDX

tHD Data Transition to End of Write

tE1LE1H,

tE2HE2L,

tE1LWH

tE2HWH

tE1LBH,

tE2HBH

tSCE

Chip Enable 1 Low or Chip Enable 2 High to

End of Write

tGHDZ

tHZOE Output Enable High to Output Hi-Z

tWHDZ(1)

tLZWE Write Enable High to Input Transition

tWLDZ(1)

tHZWE Write Enable Low to Output Hi-Z

tWLWH

tWLE1H

tWLE2L

tWLBH

tPWE Write Enable Pulse Width

Note: 1. Whatever the temperature and voltage, tWLDZ is less than tWHDX.

M36W0R5020T0, M36W0R5020B0

Unit

Min

Max

70

ns

0

ns

60

ns

60

ns

30

ns

0

ns

0

ns

60

ns

25

ns

10

ns

25

ns

50

ns

21/26

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