M36P0R8070E0 データシートの表示（PDF） - Numonyx -> Micron
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M36P0R8070E0 Datasheet PDF : 22 Pages
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M36P0R8070E0
256 Mbit (x16, multiple bank, multilevel, burst) Flash memory
128 Mbit (burst) PSRAM, 1.8 V supply, multichip package
Features
■ Multichip package
– 1 die of 256 Mbit (16 Mb x 16, multiple
bank, multilevel, burst) Flash memory
– 1 die of 128 Mbit (8 Mb x16) PSRAM
■ Supply voltage
– VDDF = VCCP = VDDQ = 1.7 to 1.95 V
– VPPF = 9 V for fast program (12 V tolerant)
■ Electronic signature
– Manufacturer code: 20h
– Device code: 8818
■ Package
– ECOPACK®
Flash memory
■ Synchronous/asynchronous read
– Synchronous burst read mode:
108 MHz, 66 MHz
– Asynchronous page read mode
– Random access: 93 ns
■ Programming time
– 4 µs typical Word program time using
Buffer Enhanced Factory Program
command
■ Memory organization
– Multiple bank memory array: 32 Mbit banks
– Four EFA (extended flash array) blocks of
64 Kbits
■ Dual operations
– Program/erase in one bank while read in
others
– No delay between read and write
operations
■ Security
– 64bit unique device number
– 2112 bit user programmable OTP Cells
■ 100 000 program/erase cycles per block
FBGA
TFBGA107 (ZAC)
■ Block locking
– All blocks locked at power-up
– Any combination of blocks can be locked
with zero latency
– WPF for block lock-down
– Absolute write protection with VPPF = VSS
■ CFI (common Flash interface)
PSRAM
■ Access time: 70 ns
■ Asynchronous page read
– Page size: 4, 8 or 16 words
– Subsequent read within page: 20 ns
■ Synchronous burst read/write
■ Low power consumption
– Active current: < 25 mA
– Standby current: 200 µA
– Deep power-down current: 10 µA
■ Low power features
– PASR (partial array self refresh)
– DPD (deep power-down) mode
December 2007
Rev 2
1/22
www.numonyx.com
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