M470T6554BGZ0-CD5/CC データシートの表示（PDF） - Samsung
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M470T6554BGZ0-CD5/CC Datasheet PDF : 19 Pages
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256MB, 512MB, 1GB Unbuffered SODIMMs
DDR2 SDRAM
Operating Current Table(1-1) (TA=0oC, VDD= 1.9V)
M470T6554BG(Z)3/M470T6554BG(Z)0 : 64Mx64 512MB Module
Symbol
IDD0
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P-F
IDD3P-S
IDD3N
IDD4W
IDD4R
IDD5B
IDD6
IDD7
CD5
(DDR533@CL=4)
760
860
64
200
240
240
120
560
1,200
1,100
1,060
44
1,840
LD5
(DDR533@CL=4)
460
560
64
200
200
120
120
260
700
700
860
40
1,060
CCC
(DDR400@CL=3)
720
760
64
200
240
240
120
520
1,000
940
1,000
44
1,760
LCC
(DDR400@CL=3)
Unit
460
mA
520
mA
64
mA
200
mA
200
mA
120
mA
120
mA
260
mA
700
mA
700
mA
860
mA
40
mA
1,060
mA
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Notes
M470T3354BG(Z)3/M470T3354BG(Z)0 : 32Mx64 256MB Module
Symbol
IDD0
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P-F
IDD3P-S
IDD3N
IDD4W
IDD4R
IDD5B
IDD6
IDD7
CD5
(DDR533@CL=4)
480
580
32
100
120
120
60
280
920
820
780
22
1,560
LD5
(DDR533@CL=4)
360
460
32
100
100
60
60
160
600
600
760
20
960
CCC
(DDR400@CL=3)
460
500
32
100
120
120
60
260
740
680
740
22
1,500
LCC
(DDR400@CL=3)
Unit
360
mA
420
mA
32
mA
100
mA
100
mA
60
mA
60
mA
160
mA
520
mA
520
mA
760
mA
20
mA
960
mA
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Notes
Rev. 1.5 Aug. 2005
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