MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54566P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
Parameter
Limits
Unit
min
typ
max
VCC
Supply voltage
4
5
8V
VO
Output voltage
0
—
50 V
Collector current VCC = 5V, Duty Cycle
IC
(Current per 1 cir-
cuit when 7 circuits
are coming on si-
P : no more than 10%
FP : no more than 6%
VCC = 5V, Duty Cycle
P : no more than 30%
0
0
—
—
350
mA
200
multaneously)
FP : no more than 20%
VIH
“H” input voltage
VCC–0.2 —
VCC
V
VIL
“L” input voltage
0
—
VCC–3
V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
Parameter
Test conditions
Limits
min
typ+
Unit
max
V (BR) CEO
VCE (sat)
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
ICEO = 100µA
VI = VCC–3V, IC = 350mA
VI = VCC–3V, IC = 200mA
50
—
—
V
—
1.1
2.2
V
—
0.9
1.6
II
Input current
VI = VCC–3.5V
—
–0.38 –0.58 mA
ICC
Supply current (one circuit coming on) VCC = 5V, VI = VCC–3.5V
hFE
DC amplification factor
VCE = 4V, VCC = 5V, IC = 350mA, Ta = 25°C
—
2000
1.4
10000
3.0 mA
—
—
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
ton
Turn-on time
toff
Turn-off time
Test conditions
CL = 15pF (note 1)
Limits
Unit
min
typ
max
—
95
—
ns
—
2500
—
ns
NOTE 1 TEST CIRCUIT
INPUT
VCC
VO
Measured
device
RL
PG
OUTPUT
50Ω
CL
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω
VI = 1 to 4V
(2) Input-output conditions : RL = 30Ω, VO = 10V, VCC = 4V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
TIMING DIAGRAM
INPUT
50%
OUTPUT
50%
ton
50%
50%
toff
Aug. 1999