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M54585 データシートの表示(PDF) - Mitsumi

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M54585 Datasheet PDF : 4 Pages
1 2 3 4
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54585P/FP
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Parameter
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
Ratings
Unit
–0.5 ~ +50
V
500
mA
–0.5 ~ +30
V
500
mA
50
V
1.79(P)/1.10(FP)
W
–20 ~ +75
°C
–55 ~ +125
°C
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
Parameter
Limits
min
typ
max Unit
VO
Output voltage
0
50
V
Collector current Duty Cycle
IC
(Current per 1 cir-
cuit when 8 circuits
P : no more than 6%
FP : no more than 4%
are coming on si-
Duty Cycle
P : no more than 34%
0
400
mA
0
200
multaneously)
FP : no more than 20%
VIH
“H” input voltage IC 400mA
IC 200mA
3.85
3.4
30
V
VIL
“L” input voltage
0
0.6
V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
Parameter
Test conditions
Limits
min
typ+
Unit
max
V (BR) CEO Collector-emitter breakdown voltage ICEO = 100µA
50
V
VI = 3.85V, IC = 400mA
VCE (sat) Collector-emitter saturation voltage
VI = 3.4V, IC = 200mA
1.3
2.4
V
1.0
1.6
II
Input current
VI = 3.85V
VI = 25V
0.95
1.8
mA
8.7
18
VF
Clamping diode forward voltage IF = 400mA
1.5
2.4
V
IR
Clamping diode reverse current VR = 50V
100
µA
hFE
DC amplification factor
VCE = 4V, IC = 350mA, Ta = 25°C
1000 2500
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
ton
Turn-on time
toff
Turn-off time
Test conditions
CL = 15pF (note 1)
Limits
Unit
min
typ
max
12
ns
240
ns
Aug. 1999

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