MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY>
M54563WP
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING (Unless otherwise noted, Ta = –20 ~ +75℃)
Symbol
Parameter
Limits
Unit
min
typ
max
VS
Supply voltage
0
-
50
V
IO
Output current (Current per 1
circuit when 8 circuits are
coming on simultaneously)
Duty Cycle
no more than 8%
Duty Cycle
no more than 55%
0
-
–350
mA
0
-
–100
VIH
“H” input voltage
2.4
-
10
V
VIL
“L” input voltage
0
-
0.2
V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = -20~+75℃)
Symbol
Parameter
Test conditions
Limits
min
typ*
max
Unit
IS(leak) # Supply leak current
VS = 50V, VI = 0.2V
-
-
100
μA
VCE(sat)
Collector-emitter saturation
voltage
VS = 10V,
VI = 2.4V
IO = – 350mA
IO = – 100mA
-
1.6
2.4
V
-
1.45
2.0
II
Input current
VI = 3V
VI = 10V
-
0.6
1.0
mA
-
3.0
5.0
IS
Supply current
VF
Clamping diode forward
voltage
IR
# Clamping diode reverse
current
VS = 50V, VI = 3V(all input)
IF = – 350mA
VR = 50V
-
5.6
15.0
mA
-
– 1.35
– 2.4
V
-
-
100
μA
*:The typical values are those measured under ambient temperature (Ta) of 25℃. There is no guarantee that these values are obtained under any conditions.
# : Unused Input pins must be connected to GND.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25℃)
Symbol
Parameter
Test conditions
ton
Turn-on time
toff
Turn-off time
CL = 15pF(note 1)
Limits
Unit
min
typ
max
-
100
-
ns
-
4800
-
ns
NOTE 1 TEST CIRCUIT
TIMING DIAGRAM
INPUT
PG
50Ω
VS
Measured
device
RL
50%
INPUT
OUTPUT
OUTPUT
CL
50%
ton
(1) Pulse generator (PG) characteristics: PRR = 1kHz,
tw = 10μs, tr = 6ns, tf = 6ns, ZO = 50Ω ,VI = 0 to 2.4V
(2) Input-output conditions : RL = 30Ω, VS = 10V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
50%
50%
toff
Jul-2011
2