M54583 データシートの表示（PDF） - Mitsumi
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M54583 Datasheet PDF : 4 Pages
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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54583P/FP
8-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
VCC
VCEO
VI
IC
Pd
Topr
Tstg
Parameter
Supply voltage
Collector-emitter voltage
Input voltage
Collector current
Power dissipation
Operating temperature
Storage temperature
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
Ratings
Unit
10
V
–0.5 ~ +50
V
–0.5 ~ VCC
V
400
mA
1.79/1.1
W
–20 ~ +75
°C
–55 ~ +125
°C
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
Parameter
Limits
min
typ
max Unit
VCC
Supply voltage
4
5
8V
VCC = 5V, Duty Cycle
P : no more than 10%
0
—
350
IC
Collector current FP : no more than 5%
Per channel
VCC = 5V, Duty Cycle
mA
P : no more than 34%
0
—
200
FP : no more than 15%
VIH
“H” input voltage
VCC–0.7 —
VCC
V
VIL
“L” input voltage
0
— VCC–3.6 V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
Parameter
Test conditions
Limits
min
typ+
Unit
max
V (BR) CEO Collector-emitter breakdown voltage ICEO = 100µA, VCC = 8V
50
—
—
V
VCE (sat) Collector-emitter saturation voltage VI = VCC–3.6V
IC = 350mA
IC = 200mA
—
1.2
2.2
—
0.98
1.6
V
II
Input current
VI = VCC–3.6V
—
–320 –600 µA
ICC
Supply current (one circuit coming on) VCC = 5V, VI = VCC–3.6V
—
1.9
3 mA
hFE
DC amplification factor
VCE = 4V, VCC = 5V, IC = 350mA, Ta = 25°C
2000
3500
—
—
+ : The typical values are those measured under ambient temperature (Ta) of 25°C. There is no guarantee that these values are obtained under any
conditions.
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
ton
Turn-on time
toff
Turn-off time
Test conditions
CL = 15pF (note 1)
Limits
Unit
min
typ
max
—
130
—
ns
—
3200
—
ns
NOTE 1 TEST CIRCUIT
TIMING DIAGRAM
INPUT
PG
50Ω
VCC
VO
Measured
device
RL
OUTPUT
CL
INPUT
50%
OUTPUT
50%
50%
50%
ton
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, ZO = 50Ω
VI = 0.4 to 4V
(2) Input-output conditions : RL = 30Ω, VO = 10V, VCC = 4V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
2
toff
May 2007
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