M58BW016DT80T3T データシートの表示（PDF） - STMicroelectronics

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M58BW016DT80T3T

16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories

STMicroelectronics 

M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB

REVISION HISTORY

Table 30. Document Revision History

Date

Version

Revision Details

January-2001

-01

First Issue.

05-Jun-2001

-02

Major rewrite and restructure.

15-Jun-2001

-03

Nd and Ne values changed in PQFP80 Package Mechanical Table

17-Jul-2001

-04

PQFP80 Package Outline Drawing and Mechanical Data Table updated

17-Dec-2001

tLEAD removed from Absolute Maximum Ratings (Table 12)

80, 90 and 100ns Speed classes defined (Tables 16, 17, 18, 19 and 20 clarified

accordingly)

-05

Figures 14, 15, 16 and 17 clarified

Temperature range 3 and 6 added

Tables 13, 14, 15, 21 and CFI Tables 26, 27, 28, 29 clarified

Document status changed from Product Preview to Preliminary Data

17-Jan-2002

-06

DC Characteristics IPP, IPP1 and IDD1 clarified

AC Bus Read Characteristics timing tGHQZ clarified

30-Aug-2002

Revision numbering modified: a minor revision will be indicated by incrementing the

tenths digit, and a major revision, by incrementing the units digit of the previous

6.1

version (e.g. revision version 06 becomes 6.0).

References of VPP pin used for block protection purposes removed. Figure 9

modified.

4-Sep-2002

Datasheet status changed from Preliminary Data to full Datasheet.

7.0

tWLWH parameter modified in Table 19, Asynchronous Write and Latch Controlled

Write AC Characteristics.

13-May-2003

Revision History moved to end of document. VPP clarified in Program and Block

7.1

Erase commands and Status Register, VPP Status bit. VPPLK added to DC

Characteristics Table. Timing TKHQV modified.

62/63

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