M58CR032C100ZB6T データシートの表示（PDF） - STMicroelectronics

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M58CR032C100ZB6T

32 Mbit (2Mb x 16, Dual Bank, Burst ) 1.8V Supply Flash Memory

STMicroelectronics 

M58CR032C

M58CR032D

32 Mbit (2Mb x 16, Dual Bank, Burst )

1.8V Supply Flash Memory

PRELIMINARY DATA

FEATURES SUMMARY

s SUPPLY VOLTAGE

– VDD = 1.65V to 2V for Program, Erase and

Read

– VDDQ = 1.65V to 3.3V for I/O Buffers

– VPP = 12V for fast Program (optional)

s SYNCHRONOUS / ASYNCHRONOUS READ

– Burst mode Read: 54MHz

– Page mode Read (4 Words Page)

– Random Access: 85, 100, 120 ns

s PROGRAMMING TIME

– 10µs by Word typical

– Double/Quadruple Word programming option

s MEMORY BLOCKS

– Dual Bank Memory Array: 8/24 Mbit

– Parameter Blocks (Top or Bottom location)

s DUAL OPERATIONS

– Read in one Bank while Program or Erase in

other

– No delay between Read and Write operations

s BLOCK LOCKING

– All blocks locked at Power up

– Any combination of blocks can be locked

– WP for Block Lock-Down

s SECURITY

– 64 bit user programmable OTP cells

– 64 bit unique device identifier

– One parameter block permanently lockable

s COMMON FLASH INTERFACE (CFI)

s 100,000 PROGRAM/ERASE CYCLES per

BLOCK

Figure 1. Packages

FBGA

TFBGA56 (ZB)

6.5 x 10 mm

s ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M58CR032C: 88C8h

– Bottom Device Code, M58CR032D: 88C9h

March 2002

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

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