M58BV016DB7T3F データシートの表示（PDF） - Numonyx -> Micron

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M58BV016DB7T3F

16 Mbit (512 Kbit x 32, boot block, burst) 3 V supply Flash memories

Numonyx -> Micron 

M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB

Signal descriptions

2.14

Output supply voltage (VDDQ)

The output supply voltage, VDDQ, is the output buffer power supply for all operations (read,

program and erase) used for DQ0-DQ31 when used as outputs.

2.15

Input supply voltage (VDDQIN)

The input supply voltage, VDDIN, is the power supply for all input signal. Input signals are: K, B,

L, W, GD, G, E, A0-A18 and DQ0-DQ31, when used as inputs.

2.16

Program/erase supply voltage (VPP)

The program/erase supply voltage, VPP, is used for program and erase operations. The

memory normally executes program and erase operations at VPP1 voltage levels. In a

manufacturing environment, programming may be speeded up by applying a higher voltage

level, VPPH, to the VPP pin.

The voltage level VPPH may be applied for a total of 80 hours over a maximum of 1000

cycles. Stressing the device beyond these limits could damage the device.

2.17

Note:

Ground (VSS and VSSQ)

The ground VSS is the reference for the internal supply voltage VDD. The ground VSSQ is the

reference for the output and input supplies VDDQ, and VDDQIN. It is essential to connect VSS

and VSSQ together.

A 0.1 µF capacitor should be connected between the supply voltages, VDD, VDDQ and VDDIN

and the grounds, VSS and VSSQ to decouple the current surges from the power supply. The

PCB track widths must be sufficient to carry the currents required during all operations of the

parts, see Table 15: DC characteristics, for maximum current supply requirements.

2.18

2.19

Don’t use (DU)

This pin should not be used as it is internally connected. Its voltage level can be between

VSS and VDDQ or leave it unconnected.

Not connected (NC)

This pin is not physically connected to the device.

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