M58LW064D データシートの表示（PDF） - STMicroelectronics

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M58LW064D

64 Mbit (8Mb x8, 4Mb x16, Uniform Block) 3V Supply Flash Memory

STMicroelectronics 

M58LW064D

64 Mbit (8Mb x8, 4Mb x16, Uniform Block)

3V Supply Flash Memory

FEATURES SUMMARY

■ WIDE x8 or x16 DATA BUS for HIGH

BANDWIDTH

■ SUPPLY VOLTAGE

– VDD = VDDQ = 2.7 to 3.6V for Program,

Erase and Read operations

■ ACCESS TIME

– Random Read 110ns

– Page Mode Read 110/25ns

■ PROGRAMMING TIME

– 16 Word Write Buffer

– 12µs Word effective programming time

■ 64 UNIFORM 64 KWord/128KByte MEMORY

BLOCKS

■ ENHANCED SECURITY

– Block Protection/ Unprotection

– VPEN signal for Program Erase Enable

– 128 bit Protection Register with 64 bit

Unique Code in OTP area

■ PROGRAM and ERASE SUSPEND

■ COMMON FLASH INTERFACE

■ 100, 000 PROGRAM/ERASE CYCLES per

BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Device Code M58LW064D: 0017h

■ PACKAGES

– Compliant with Lead-Free Soldering

Processes

– Lead-Free Versions

Figure 1. Packages

TSOP56 (N)

14 x 20 mm

TBGA

TBGA64 (ZA)

10 x 13 mm

September 2004

1/50

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