M58LW128A データシートの表示（PDF） - STMicroelectronics

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M58LW128A

128 Mbit (8Mb x16 or 4Mb x32, Uniform Block, Burst) 3V Supply Flash Memories

STMicroelectronics 

M58LW128A

M58LW128B

128 Mbit (8Mb x16 or 4Mb x32, Uniform Block, Burst)

3V Supply Flash Memories

PRELIMINARY DATA

FEATURES SUMMARY

s WIDE DATA BUS for HIGH BANDWIDTH

– M58LW128A: x16

– M58LW128B: x16/x32

s SUPPLY VOLTAGE

– VDD = 2.7 to 3.6V core supply voltage for Pro-

gram, Erase and Read operations

– VDDQ = 1.8 to VDD for I/O Buffers

s SYNCHRONOUS/ASYNCHRONOUS READ

– Synchronous Burst read

– Pipelined Synchronous Burst Read

– Asynchronous Random Read

– Asynchronous Address Latch Controlled

Read

– Page Read

s ACCESS TIME

– Synchronous Burst Read up to 66MHz

– Asynchronous Page Mode Read 150/25ns

– Random Read 150ns

s PROGRAMMING TIME

– 16 Word or 8 Double-Word Write Buffer

– 12µs Word effective programming time

s 128 UNIFORM 64 KWord MEMORY BLOCKS

s BLOCK PROTECTION/ UNPROTECTION

s PROGRAM and ERASE SUSPEND

s OTP SECURITY AREA

s COMMON FLASH INTERFACE

s 100,000 PROGRAM/ERASE CYCLES per

BLOCK

s ELECTRONIC SIGNATURE

– Manufacturer Code: 0020h

– Device Code M58LW128A: 8818h

– Device Code M58LW128B: 8819h

Figure 1. Packages

TSOP56 (N)

14 x 20mm

TBGA

TBGA64 (ZA)

10 x 13mm

TBGA

TBGA80 (ZA)

10 x 13mm

February 2003

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

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