M58MR032-ZCT データシートの表示（PDF） - STMicroelectronics

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M58MR032-ZCT

32 Mbit (2Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory

STMicroelectronics 

M58MR032C, M58MR032D

Table 1. Signal Names

A16-A20

Address Inputs

ADQ0-ADQ15

Data Input/Outputs or Address

Inputs, Command Inputs

E

Chip Enable

G

Output Enable

W

Write Enable

RP

Reset/Power-down

WP

Write Protect

K

Burst Clock

L

Latch Enable

WAIT

Wait Data in Burst Mode

BINV

Bus Invert

VDD

Supply Voltage

VDDQ

Supply Voltage for Input/Output

Buffers

VPP

Optional Supply Voltage for

Fast Program & Erase

VSS

Ground

DU

Don’t Use as Internally Connected

NC

Not Connected Internally

Table 2. Absolute Maximum Ratings (1)

Organization

The M58MR032 is organized as 2Mb by 16 bits.

The first sixteen address lines are multiplexed with

the Data Input/Output signals on the multiplexed

address/data bus ADQ0-ADQ15. The remaining

address lines A16-A20 are the MSB addresses.

Chip Enable E, Output Enable G and Write Enable

W inputs provide memory control.

The clock K input synchronizes the memory to the

microprocessor during burst read.

Reset RP is used to reset all the memory circuitry

and to set the chip in power-down mode if a proper

setting of the Read Configuration Register en-

ables this function.

WAIT output indicates to the microprocessor the

status of the memory during the burst mode oper-

ations.

Memory Blocks

The device features asymmetrically blocked archi-

tecture. M58MR032 has an array of 71 blocks and

is divided into two banks A and B, providing Dual

Bank operations. While programming or erasing in

Bank A, read operations are possible into Bank B

or vice versa. Only one bank at the time is allowed

to be in program or erase mode. It is possible to

perform burst reads that cross bank boundaries.

The memory features an erase suspend allowing

reading or programming in another block. Once

suspended the erase can be resumed. Program

can be suspended to read data in another block

and then resumed. The Bank Size and sectoriza-

tion are summarized in Table 3. Parameter Blocks

are located at the top of the memory address

space for the M58MR032C, and at the bottom for

the M58MR032D. The memory maps are shown in

Figure 3.

Symbol

Parameter

Value

Unit

TA

Ambient Operating Temperature (2)

–40 to 85

°C

TBIAS

Temperature Under Bias

–40 to 125

°C

TSTG

Storage Temperature

–55 to 155

°C

VIO (3)

Input or Output Voltage

–0.5 to VDDQ+0.5

V

VDD, VDDQ Supply Voltage

–0.5 to 2.7

V

VPP

Program Voltage

–0.5 to 13

V

Note: 1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may

cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions

above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-

tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-

ity documents.

2. Depends on range.

3. Minimum Voltage may undershoot to –2V during transition and for less than 20ns.

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