M58MR064-ZC データシートの表示（PDF） - STMicroelectronics

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M58MR064-ZC

64 Mbit (4Mb x16, Mux I/O, Dual Bank, Burst) 1.8V Supply Flash Memory

STMicroelectronics 

M58MR064C

M58MR064D

64 Mbit (4Mb x16, Mux I/O, Dual Bank, Burst)

1.8V Supply Flash Memory

s SUPPLY VOLTAGE

– VDD = VDDQ = 1.65V to 2.0V for Program,

Erase and Read

– VPP = 12V for fast Program (optional)

s MULTIPLEXED ADDRESS/DATA

s SYNCHRONOUS / ASYNCHRONOUS READ

– Burst mode Read: 54MHz

– Page mode Read (4 Words Page)

– Random Access: 100ns

s PROGRAMMING TIME

– 10µs by Word typical

– Two or four words programming option

s MEMORY BLOCKS

– Dual Bank Memory Array: 16/48 Mbit

– Parameter Blocks (Top or Bottom location)

s DUAL OPERATIONS

– Read within one Bank while Program or

Erase within the other

– No delay between Read and Write operations

s PROTECTION/SECURITY

– All Blocks protected at Power-up

– Any combination of Blocks can be protected

– 64 bit unique device identifier

– 64 bit user programmable OTP cells

– One parameter block permanently lockable

s COMMON FLASH INTERFACE (CFI)

s 100,000 PROGRAM/ERASE CYCLES per

BLOCK

s ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M58MR064C: 88DCh

– Bottom Device Code, M58MR064D: 88DDh

FBGA

TFBGA48 (ZC)

10 x 4 ball array

Figure 1. Logic Diagram

VDD VDDQ VPP

6

A16-A21

16

ADQ0-ADQ15

W

E

WAIT

G

M58MR064C

M58MR064D

RP

BINV

WP

L

K

VSS

AI90087

March 2002

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