M58WR064 データシートの表示（PDF） - STMicroelectronics

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M58WR064

64 Mbit (4Mb x 16, Multiple Bank, Burst ) 1.8V Supply Flash Memory

STMicroelectronics 

M58WR064T, M58WR064B

COMMAND INTERFACE - FACTORY PROGRAM COMMANDS

The Factory Program commands are used to

speed up programming. They require VPP to be at

VPPH. Refer to Table 7, Factory Program Com-

mands, in conjunction with the following text de-

scriptions.

Double Word Program Command

The Double Word Program command improves

the programming throughput by writing a page of

two adjacent words in parallel. The two words

must differ only for the address A0.

Programming should not be attempted when VPP

is not at VPPH. The command can be executed if

VPP is below VPPH but the result is not guaranteed.

Three bus write cycles are necessary to issue the

Double Word Program command.

s The first bus cycle sets up the Double Word

Program Command.

s The second bus cycle latches the Address and

the Data of the first word to be written.

s The third bus cycle latches the Address and the

Data of the second word to be written and starts

the Program/Erase Controller.

Read operations in the bank being programmed

output the Status Register content after the pro-

gramming has started.

During Double Word Program operations the bank

being programmed will only accept the Read Ar-

ray, Read Status Register, Read Electronic Signa-

ture and Read CFI Query command, all other

commands will be ignored. Dual operations are

not supported during Double Word Program oper-

ations and the command cannot be suspend-

ed.Typical Program times are given in Table 14,

Program, Erase Times and Program/Erase Endur-

ance Cycles.

Programming aborts if Reset goes to VIL. As data

integrity cannot be guaranteed when the program

operation is aborted, the memory locations must

be reprogrammed.

See Appendix C, Figure 19, Double Word Pro-

gram Flowchart and Pseudo Code, for the flow-

chart for using the Double Word Program

command.

Quadruple Word Program Command

The Quadruple Word Program command im-

proves the programming throughput by writing a

page of four adjacent words in parallel. The four

words must differ only for the addresses A0 and

A1.

Programming should not be attempted when VPP

is not at VPPH. The command can be executed if

VPP is below VPPH but the result is not guaranteed.

Five bus write cycles are necessary to issue the

Quadruple Word Program command.

s The first bus cycle sets up the Double Word

Program Command.

s The second bus cycle latches the Address and

the Data of the first word to be written.

s The third bus cycle latches the Address and the

Data of the second word to be written.

s The fourth bus cycle latches the Address and

the Data of the third word to be written.

s The fifth bus cycle latches the Address and the

Data of the fourth word to be written and starts

the Program/Erase Controller.

Read operations to the bank being programmed

output the Status Register content after the pro-

gramming has started.

Programming aborts if Reset goes to VIL. As data

integrity cannot be guaranteed when the program

operation is aborted, the memory locations must

be reprogrammed.

During Quadruple Word Program operations the

bank being programmed will only accept the Read

Array, Read Status Register, Read Electronic Sig-

nature and Read CFI Query command, all other

commands will be ignored.

Dual operations are not supported during Quadru-

ple Word Program operations and the command

cannot be suspended. Typical Program times are

given in Table 14, Program, Erase Times and Pro-

gram/Erase Endurance Cycles.

See Appendix C, Figure 20, Quadruple Word Pro-

gram Flowchart and Pseudo Code, for the flow-

chart for using the Quadruple Word Program

command.

Enhanced Factory Program Command

The Enhanced Factory Program command can be

used to program large streams of data within any

one block. It greatly reduces the total program-

ming time when a large number of Words are writ-

ten to a block at any one time.

The use of the Enhanced Factory Program com-

mand requires certain operating conditions.

s VPP must be set to VPPH

s VDD must be within operating range

s Ambient temperature, TA must be 25°C ± 5°C

s The targeted block must be unlocked

Dual operations are not supported during the En-

hanced Factory Program operation and the com-

mand cannot be suspended.

For optimum performance the Enhanced Factory

Program commands should be limited to a maxi-

mum of 10 program/erase cycles per block. If this

limit is exceeded the internal algorithm will contin-

ue to work properly but some degradation in per-

19/81

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