M59DR032EA データシートの表示（PDF） - STMicroelectronics

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M59DR032EA

32 Mbit (2Mb x 16, Dual Bank, Page ) 1.8V Supply Flash Memory

STMicroelectronics 

M59DR032EA, M59DR032EB

Table 16. DC Characteristics

Symbol

Parameter

Test Condition

Min

Typ

Max

Unit

ILI Input Leakage Current

0V ≤ VIN ≤ VDD

±1

µA

ILO Output Leakage Current

0V ≤ VOUT ≤ VDD

±5

µA

ICC1

Supply Current

(Read Mode)

E = VIL, G = VIH, f = 6MHz

3

6

mA

ICC2

Supply Current

(Power-Down)

RP = VSS ± 0.2V

2

10

µA

ICC3 Supply Current (Standby)

E = VDD ± 0.2V

10

50

µA

ICC4 (1)

Supply Current

(Program or Erase)

Word Program, Block Erase

in progress

10

20

mA

ICC5 (1)

Supply Current

(Dual Bank)

Program/Erase in progress

in one Bank, Read in the

other Bank

13

26

mA

IPP1

VPP Supply Current

(Program or Erase)

VPP = 12V ± 0.6V

2

5

mA

IPP2

VPP Supply Current

(Standby or Read)

VPP ≤ VDD

VPP = 12V ± 0.6V

0.2

5

µA

100

400

µA

VIL Input Low Voltage

–0.5

0.4

V

VIH Input High Voltage

VDDQ –0.4

VDDQ + 0.4 V

VOL Output Low Voltage

IOL = 100µA

0.1

V

VOH

Output High Voltage

CMOS

IOH = –100µA

VDDQ –0.1

V

VPP (2,3)

VPP Supply Voltage

(Program or Erase)

–0.4

Double Word Program

11.4

VDD + 0.4

V

12.6

V

Note: 1. Sampled only, not 100% tested.

2. VPP may be connected to 12V power supply for a total of less than 100 hrs.

3. For standard program/erase operation VPP is don’t care.

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