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M63823P データシートの表示(PDF) - Mitsumi

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M63823P Datasheet PDF : 4 Pages
1 2 3 4
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63823P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –40 ~ +85°C)
Symbol
Parameter
Limits
Unit
min
typ
max
VO
Output voltage
0
50
V
Collector current Duty Cycle
IC
(Current per 1 cir-
cuit when 7 circuits
P : no more than 8%
FP : no more than 5%
GP : no more than 4%
are coming on si- Duty Cycle
0
400
mA
multaneously)
P : no more than 30%
FP : no more than 20%
0
200
GP : no more than 15%
IC 400mA
VIH
“H” input voltage
IC 200mA
3.85
3.4
25
V
25
VIL
“L” input voltage
0
0.6
V
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
Test conditions
V (BR) CEO
VCE(sat)
II
VF
IR
hFE
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Input current
Clamping diode forward volltage
Clamping diode reverse current
DC amplification factor
ICEO = 100µA
II = 500µA, IC = 350mA
II = 350µA, IC = 200mA
II = 250µA, IC = 100mA
VI = 3.85V
IF = 350mA
VR = 50V
VCE = 4V, IC = 350mA
Limits
Unit
min
typ
max
50
V
1.2
1.6
1.0
1.3
V
0.9
1.1
0.9
1.4
mA
1.4
2.0
V
100
µA
1000 2000
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25°C)
Symbol
Parameter
ton
Turn-on time
toff
Turn-off time
Test conditions
CL = 15pF (note 1)
Limits
Unit
min
typ
max
15
ns
350
ns
NOTE 1 TEST CIRCUIT
INPUT
Vo
PG
50
Measured device
RL
OPEN
OUTPUT
CL
TIMING DIAGRAM
INPUT
50%
OUTPUT
50%
ton
(1)Pulse generator (PG) characteristics : PRR=1kHz,
tw = 10µs, tr = 6ns, tf = 6ns, Zo = 50
VP = 3.85VP-P
(2)Input-output conditions : RL = 25, Vo = 10V
(3)Electrostatic capacity CL includes floating capacitance
at connections and input capacitance at probes
50%
50%
toff
Jan. 2000

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