M63823P データシートの表示（PDF） - Mitsumi
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M63823P Datasheet PDF : 4 Pages
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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63823P/FP/GP
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
Duty Cycle-Collector Characteristics
(M63823GP)
500
400
1
300
200
•The collector current values
100
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the
value of the simultaneously-operated circuit.
0 •Ta = 25°C
0
20
40 60
80
2
3
4
65 7
100
Duty cycle (%)
DC Amplification Factor
Collector Current Characteristics
104
VCE = 4V
7
5
Ta = 85°C
3
2
103
Ta = –40°C
7
5
Ta= 25°C
3
2
102
101
23
5 7 102
23
5 7 103
Collector current IcC (mA)
Input Characteristics
16
12
Ta = –40°C
8
Ta = 25°C
4
Ta = 85°C
00
5
10 15 20 25
Input voltage VI (V)
Duty Cycle-Collector Characteristics
(M63823GP)
500
400
300
200
100 •The collector current values
represent the current per circuit.
•Repeated frequency ≥ 10Hz
•The value the circle represents the
0 value of the simultaneously-operated circuit. •Ta = 85°C
0
20 40 60
80
1
2
3
4 65 7
100
Duty cycle (%)
Grounded Emitter Transfer Characteristics
500
400
300
200
100
0
0
Ta = 85°C
Ta = 25°C
Ta = –40°C
1
2
3
4
5
Input voltage VI (V)
Clamping Diode Characteristics
500
400
300
200
100
Ta = 85°C
Ta = 25°C
Ta = –40°C
00
0.5
1.0
1.5
2.0
Forward bias voltage VF (V)
Jan. 2000
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