AS4C1M16E5-45JC データシートの表示（PDF） - Alliance Semiconductor
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AS4C1M16E5-45JC Datasheet PDF : 22 Pages
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Write cycle
Symbol
tWCS
tWCH
tWP
tRWL
tCWL
tDS
tDH
Parameter
Write command setup time
Write command hold time
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data-in setup time
Data-in hold time
AS4C1M16E5
®
-45
Min Max
0
–
10
–
10
–
10
–
8
–
0
–
8
–
-50
Min Max
0
–
10
–
10
–
10
–
8
–
0
–
8
–
-60
Min Max
0
–
10
–
10
–
10
–
10
–
0
–
10
–
Unit Notes
ns 14
ns 14
ns
ns
ns
ns 15
ns 15
Read-modify-write cycle
Symbol
tRWC
tRWD
tCWD
tAWD
Parameter
Read-write cycle time
RAS to WE delay time
CAS to WE delay time
Column address to WE delay time
-45
Min Max
105 –
65
–
30
–
40
–
-50
Min Max
113 –
67
–
32
–
42
–
-60
Min Max
135 –
77
–
35
–
47
–
Unit Notes
ns
ns 14
ns 14
ns 14
Refresh cycle
Symbol
tCSR
tCHR
tRPC
tCPT
Parameter
CAS setup time (CAS-before-RAS)
CAS hold time (CAS-before-RAS)
RAS precharge to CAS hold time
CAS precharge time
(CBR counter test)
-45
Min Max
5
–
8
–
0
–
10
–
-50
Min Max
5
–
8
–
0
–
10
–
-60
Min Max
5
–
10
–
0
–
10
–
Unit Notes
ns 6
ns 6
ns
ns
4/11/01; v.1.0
Alliance Semiconductor
P. 6 of 22
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