AS4C256K16F0-50JC データシートの表示（PDF） - Alliance Semiconductor
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AS4C256K16F0-50JC Datasheet PDF : 25 Pages
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AS4C256K16FO
®
Write cycle
Standard
Symbol
Parameter
tASC
tCAH
tAWR
tWCS
tWCH
tWCR
tWP
tRWL
tCWL
tDS
tDH
tDHR
Column address setup time
Column address hold time
Column address hold time to RAS
Write command setup time
Write command hold time
Write command hold time to RAS
Write command pulse width
Write command to RAS lead time
Write command to CAS lead time
Data-in setup time
Data-in hold time
Data-in hold time to RAS
(VCC = 5V ± 10%, GND = 0V, Ta = 0° C to +70° C)
–25
–30
–35
–50
Min Max Min Max Min Max Min Max Unit Notes
0–0–0–0–
ns
5–5–5–9–
ns
19 – 26 – 28 – 30 –
ns
0–0–0–0–
ns
11
5–5–5–9–
ns
11
19 – 26 – 28 – 30 –
ns
5–5–5–9–
ns
7 – 10 – 11 – 12 –
ns
5 – 10 – 11 – 12 –
ns
0–0–0–0–
ns
12
5–5–5–9–
ns
12
19 – 26 – 28 – 30 –
ns
Read-modify-write cycle
Standard
Symbol
Parameter
tRWC
tRWD
tCWD
tAWD
tRSH(W)
tCAS(W)
Read-write cycle time
RAS to WE delay time
CAS to WE delay time
Column address to WE delay time
CAS to RAS hold time (write)
CAS pulse width (write)
(VCC = 5V ± 10%, GND = 0V, Ta = 0° C to +70° C)
–25
–30
–35
–50
Min Max Min Max Min Max Min Max Unit Notes
100 – 100 – 105 – 120 –
ns
34 – 50 – 54 – 60 –
ns
11
17 – 26 – 28 – 30 –
ns
11
21 – 32 – 35 – 40 –
ns
11
7 – 10 – 10 – 12 –
ns
15 – 15 – 15 – 15 –
ns
Fast page mode cycle
Standard
Symbol
Parameter
tPC Read or write cycle time
tCAP Access time from CAS precharge
tCP CAS precharge time
tPCM Fast page mode RMW cycle
tCRW Page mode CAS pulse width (RMW)
tRASP RAS pulse width
(VCC = 5V ± 10%, GND = 0V, Ta = 0° C to +70° C)
–25
–30
–35
–50
Min Max Min Max Min Max Min Max Unit Notes
8 – 12 – 14 – 25 – ns 14
– 14 – 19 – 21 – 23 ns 13
3 – 3 – 4 – 5 – ns
56 – 56 – 58 – 60 – ns
44 – 44 – 46 – 50 – ns
25 75K 30 75K 35 75K 50 75K ns
4/11/01; V.0.9.1
Alliance Semiconductor
P. 5 of 25
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