HA8550SC データシートの表示（PDF） - Hi-Sincerity Microelectronics
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HA8550SC Datasheet PDF : 4 Pages
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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6109
Issued Date : 1997.09.05
Revised Date : 2001.04.27
Page No. : 1/4
HA8550S
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HA8550S is designed for general purpose amplifier
applications.
Features
• High DC Current Gain (hFE=100~500 at IC=150mA)
• Complementary to HA8050S
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature ................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ............................................................................... 625 mW
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage ....................................................................................... -25 V
VCEO Collector to Emitter Voltage ..................................................................................... -20 V
VEBO Emitter to Base Voltage ............................................................................................ -5 V
IC Collector Current ...................................................................................................... -700 mA
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
-25
-
BVCEO
-20
-
BVEBO
-5
-
ICBO
-
-
*VCE(sat)
-
-
VBE(on)
-
-
*hFE1
100
-
*hFE2
-
170
FT
150
-
Cob
-
-
Classification on hFE
Max.
-
-
-
-1
-0.5
-1
500
-
-
10
Unit
Test Conditions
V
V
V
uA
V
V
MHz
pF
IC=-10uA
IC=-1mA
IE=-10uA
VCB=-20V
IC=-0.5A, IB=-50mA
VCE=-1V, IC=-150mA
VCE=-1V, IC=-150mA
VCE=-1V, IC=-500mA
VCE=-10V, IC=-20mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Rank
hFE1
C
100~200
D
150~300
E
250-500
HA8550S
HSMC Product Specification
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