MA3D653 データシートの表示（PDF） - Panasonic Corporation

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MA3D653

Silicon planar type (cathode common)

Panasonic Corporation 

Fast Recovery Diodes (FRD)

MA3D653

Silicon planar type (cathode common)

For high-frequency rectification

I Features

• Low forward rise voltage VF

• Fast reverse recovery time trr

• TO-220D (Full-pack package) with high dielectric breakdown

voltage > 5.0 kV

• Easy-to-mount, caused by its V cut lead end

I Absolute Maximum Ratings Ta = 25°C

Parameter

Symbol

Rating

Unit

Repetitive peak reverse voltage VRRM

300

V

Non-repetitive peak reverse

VRSM

300

V

surge voltage

Average forward current

IF(AV)

5

A

Non-repetitive peak forward

IFSM

45

A

surge current*

Junction temperature

Storage temperature

Tj

−40 to +150

°C

Tstg

−40 to +150

°C

Note) * : Half sine-wave; 10 ms/cycle

9.9 ± 0.3

Unit : mm

4.6 ± 0.2

2.9 ± 0.2

φ 3.2 ± 0.1

1.4 ± 0.2

1.6 ± 0.2

0.8 ± 0.1

2.54 ± 0.3

1 2 3 5.08 ± 0.5

2.6 ± 0.1

0.55 ± 0.15

Internal Connection

1 : Anode

2 : Cathode

3 : Anode

TO-220D Package

123

I Electrical Characteristics Ta = 25°C

Parameter

Symbol

Repetitive peak reverse current

Forward voltage (DC)

Reverse recovery time*

Thermal resistance

IRRM1

IRRM2

VF

trr

Rth(j-c)

Rth(j-a)

Note) 1. Rated input/output frequency: 10 MHz

2. Tightening torque-max. 8 kg × cm

3. * : trr measuring circuit

Conditions

VRRM = 300 V, TC = 25°C

VRRM = 300 V, Tj = 150°C

IF = 2.5 A, TC = 25°C

IF = 1 A, IR = 1 A

Min Typ Max Unit

20

µA

2

mA

0.98

V

50

ns

3 °C/W

63 °C/W

50 Ω

50 Ω

D.U.T

5.5 Ω

trr

IF

IR

0.1 × IR

1

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