MA3X152D データシートの表示（PDF） - Panasonic Corporation

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MA3X152D

Silicon epitaxial planar type

Panasonic Corporation 

Switching Diodes

MA3X152D

Silicon epitaxial planar type

For switching circuits

I Features

• Short reverse recovery time trr

• Small terminal capacitance, Ct

I Absolute Maximum Ratings Ta = 25°C

Parameter

Symbol

Rating

Unit

Reverse voltage (DC)

VR

80

V

Peak reverse voltage

VRM

80

V

Forward current Single

IF

100

mA

(DC)

Double

150

Peak forward

Single

IFM

225

mA

current

Double

340

Non-repetitive peak Single

IFSM

500

mA

forward surge current* Double

750

Junction temperature

Storage temperature

Tj

150

°C

Tstg

−55 to +150

°C

Note) * : t = 1 s

0.65 ± 0.15

+ 0.2

2.8 − 0.3

+ 0.25

1.5 − 0.05

Unit : mm

0.65 ± 0.15

1

3

2

0.1 to 0.3

0.4 ± 0.2

1 : Cathode 1

2 : Cathode 2 JEDEC : TO-236

3 : Anode 1,2 EIAJ : SC-59

Mini Type Package (3-pin)

Marking Symbol: MO

Internal Connection

1

3

2

I Electrical Characteristics Ta = 25°C

Parameter

Symbol

Reverse current (DC)

IR

Forward voltage (DC)

VF

Reverse voltage (DC)

VR

Terminal capacitance

Ct

Reverse recovery time*

trr

Note) 1. Rated input/output frequency: 100 MHz

2. * : trr measuring circuit

Conditions

VR = 75 V

IF = 100 mA

IR = 100 µA

VR = 0 V, f = 1 MHz

IF = 10 mA, VR = 6 V

Irr = 0.1 · IR, RL = 100 Ω

Min Typ Max Unit

0.1

µA

1.2

V

80

V

15

pF

10

ns

Bias Application Unit N-50BU

A

Pulse Generator

(PG-10N)

Rs = 50 Ω

W.F.Analyzer

(SAS-8130)

Ri = 50 Ω

Input Pulse

tr

tp

t

10%

VR

90%

tp = 2 µs

tr = 0.35 ns

δ = 0.05

Output Pulse

IF

trr

t

Irr = 0.1 · IR

IF = 10 mA

VR = 6 V

RL = 100 Ω

1

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