MAC9M データシートの表示（PDF） - Motorola => Freescale
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MAC9M Datasheet PDF : 4 Pages
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
TRIACS
Silicon Bidirectional Thyristors
Designed for high performance full-wave ac control applications where high
noise immunity and high commutating di/dt are required.
• Blocking Voltage to 800 Volts
• On-State Current Rating of 8.0 Amperes RMS at 100°C
• Uniform Gate Trigger Currents in Three Modes
• High Immunity to dv/dt — 500 V/µs minimum at 125°C
• Minimizes Snubber Networks for Protection
• Industry Standard TO-220AB Package
• High Commutating di/dt — 6.5 A/ms minimum at 125°C
MAC9
SERIES*
*Motorola preferred devices
TRIACS
8.0 AMPERES RMS
400 thru 800
VOLTS
MT2
MT1
MT2
G
CASE 221A-06
(TO-220AB)
Style 4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VDRM
Peak Repetitive Off-State Voltage (1)
(– 40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)
MAC9D
MAC9M
MAC9N
Volts
400
600
800
IT(RMS)
On-State RMS Current
(60 Hz, TC = 100°C)
8.0
A
ITSM
I2t
Peak Non-repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 ms)
80
A
26
A2sec
PGM
PG(AV)
TJ
Tstg
Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 80°C)
Average Gate Power (t = 8.3 ms, TC = 80°C)
Operating Junction Temperature Range
Storage Temperature Range
16
0.35
– 40 to +125
– 40 to +150
Watts
Watts
°C
°C
THERMAL CHARACTERISTICS
RθJC
RθJA
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
2.2
°C/W
62.5
TL
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
260
°C
(1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
3–49
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