MAC8SD データシートの表示（PDF） - ON Semiconductor

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MAC8SD

Sensitive Gate Triacs Silicon Bidirectional Thyristors

ON Semiconductor 

MAC8SD, MAC8SM, MAC8SN

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction−to−Case

Junction−to−Ambient

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds

Symbol

RqJC

RqJA

TL

Value

2.2

62.5

260

Unit

°C/W

°C

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic

Symbol Min

Typ

Max

OFF CHARACTERISTICS

Peak Repetitive Blocking Current

(VD = Rated VDRM, VRRM; Gate Open)

ON CHARACTERISTICS

IDRM,

TJ = 25°C

IRRM

−

TJ = 110°C

−

−

0.01

−

2.0

Peak On-State Voltage (Note ) (ITM =  11A)

Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

VTM

−

−

1.85

IGT

−

2.0

5.0

−

3.0

5.0

−

3.0

5.0

Holding Current (VD = 12V, Gate Open, Initiating Current =  150mA)

Latching Current (VD = 24V, IG = 5mA)

MT2(+), G(+)

MT2(−), G(−)

MT2(+), G(−)

IH

−

3.0

10

IL

−

5.0

15

−

10

20

−

5.0

15

Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100W)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

VGT

0.45 0.62

1.5

0.45 0.60

1.5

0.45 0.65

1.5

DYNAMIC CHARACTERISTICS

Rate of Change of Commutating Current

VD = 400 V, ITM = 3.5 A, Commutating dv/dt = 10 V m/sec,

Gate Open, TJ = 110°C, f = 500 Hz, Snubber: CS = 0.01 mF,

RS =15 W, See Figure 16.)

Critical Rate of Rise of Off-State Voltage

(VD = Rate VDRM, Exponential Waveform, RGK = 510 W, TJ = 110°C)

2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

di/dt(c)

8.0

10

−

dv/dt

25

75

−

Unit

mA

V

mA

mA

mA

V

A/ms

V/ms

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