M29F002 データシートの表示（PDF） - Fujitsu

部品番号

コンポーネント説明

メーカー

M29F002

2M (256K X 8) BIT FLASH MEMORY

Fujitsu 

MBM29F002TC-55/-70/-90/MBM29F002BC-55/-70/-90

s GENERAL DESCRIPTION

The MBM29F002TC/BC is a 2 M-bit, 5.0 V-Only Flash memory organized as 256K bytes of 8 bits each. The

MBM29F002TC/BC is offered in a 32-pin TSOP(I) and 32-pin PLCC packages. This device is designed to be

programmed in-system with the standard system 5.0 V VCC supply. A 12.0 V VPP is not required for program or

erase operations. The device can also be reprogrammed in standard EPROM programmers.

The standard MBM29F002TC/BC offers access times between 55 ns and 90 ns allowing operation of high-speed

microprocessors without wait states. To eliminate bus contention the device has separate chip enable (CE), write

enable (WE), and output enable (OE) controls.

The MBM29F002TC/BC is command set compatible with JEDEC standard E2PROMs. Commands are written

to the command register using standard microprocessor write timings. Register contents serve as input to an

internal state-machine which controls the erase and programming circuitry. Write cycles also internally latch

addresses and data needed for the programming and erase operations. Reading data out of the device is similar

to reading from 12.0 V Flash or EPROM devices.

The MBM29F002TC/BC is programmed by executing the program command sequence. This will invoke the

Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths

and verifies proper cell margin. Each sector can be programmed and verified in less than 0.5 seconds. Erase

is accomplished by executing the erase command sequence. This will invoke the Embedded Erase Algorithm

which is an internal algorithm that automatically preprograms the array if it is not already programmed before

executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies

proper cell margin.

This device also features a sector erase architecture. The sector erase mode allows for sectors of memory to

be erased and reprogrammed without affecting other sectors. A sector is typically erased and verified within 1

second (if already completely preprogrammed). The MBM29F002TC/BC is erased when shipped from the

factory.

The MBM29F002TC/BC device also features hardware sector protection. This feature will disable both program

and erase operations in any number of secotrs (0 through 6).

Fujitsu has implemented an Erase Suspend feature that enables the user to put erase on hold for any period of

time to read data from or program data to a non-busy sector. Thus, true background erase can be achieved.

The device features single 5.0 V power supply operation for both read and program functions. Internally generated

and regulated voltages are provided for the program and erase operations. A low VCC detector automatically

inhibits write operations during power transitions. The end of program or erase is detected by Data Polling of

DQ7, or by the Toggle Bit I feature on DQ6. Once the end of a program or erase cycle has been completed, the

device automatically resets to the read mode.

The MBM29F002TC/BC also has a hardware RESET pin. When this pin is driven low, execution of any Embedded

Program or Embedded Erase operations will be terminated. The internal state machine will then be reset into

the read mode. The RESET pin may be tied to the system reset circuity. Therefore, if a system reset occurs

during the Embedded Program or Embedded Erase operation, the device will be automatically reset to a read

mode. This will enable the system microprocessor to read the boot-up firmware from the Flash memory.

Fujitsu's Flash technology combines years of EPROM and E2PROM experience to produce the highest levels

of quality, reliability, and cost effectiveness. The MBM29F002TC/BC memory electrically erases all bits within a

sector simultaneously via Fowler-Nordheim tunneling. The bytes are programmed one byte at a time using the

EPROM programming mechanism of hot electron injection.

3

Share Link: