MBM29LV650UE データシートの表示（PDF） - Fujitsu

部品番号

コンポーネント説明

メーカー

MBM29LV650UE

FLASH MEMORY CMOS 64M (4M x 16) BIT

Fujitsu 

MBM29LV650UE/651UE-90/12

Table 3 MBM29LV650UE/651UE Command Definitions

Command

Sequence

Bus

Write

Cycles

First Bus Second Bus Third Bus

Write Cycle Write Cycle Write Cycle

Fourth Bus

Read/Write

Cycle

Fifth Bus

Write Cycle

Sixth Bus

Write Cycle

Req’d Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data Addr. Data

Read/Reset

1 XXXh F0h — — — — — — — — — —

Read/Reset

3 XXXh AAh XXXh 55h XXXh F0h RA RD — — — —

Autoselect

3 XXXh AAh XXXh 55h XXXh 90h — — — — — —

Program

4 XXXh AAh XXXh 55h XXXh A0h PA PD — — — —

Chip Erase

6 XXXh AAh XXXh 55h XXXh 80h XXXh AAh XXXh 55h XXXh 10h

Sector Erase

6 XXXh AAh XXXh 55h XXXh 80h XXXh AAh XXXh 55h SA 30h

Erase Suspend

1 XXXh B0h — — — — — — — — — —

Erase Resume

1 XXXh 30h — — — — — — — — — —

Set to Fast Mode 3 XXXh AAh XXXh 55h XXXh 20h — — — — — —

Fast Program *1 2 XXXh A0h PA PD — — — — — — — —

Reset from Fast

Mode *1

2 XXXh 90h XXXh F0h — —

—

—

—

—

——

Extended Sector

Group Protection 4 XXXh 60h SPA 60h SPA 40h SPA SD — — — —

*2

Query *3

1 XXh 98h — — — — — — — — — —

Hi-ROM Entry

3 XXXh AAh XXXh 55h XXXh 88h — — — — — —

Hi-ROM

Program *4

4 XXXh AAh XXXh 55h XXXh A0h PA PD — — — —

Hi-ROMExit *4

4 XXXh AAh XXXh 55h XXXh 90h XXXh 00h — — — —

*1: This command is valid while Fast Mode.

*2: This command is valid while RESET = VID.

*3: The valid addresses are A6 to A0.

*4: This command is valid while Hi-ROM mode.

Note:1. Address bits = X = “H” or “L” for all address commands except or Program Address (PA) and Sector Address

(SA).

2.Bus operations are defined in Table 2.

3.RA = Address of the memory location to be read.

PA = Address of the memory location to be programmed. Addresses are latched on the falling edge of

the write pulse.

SA = Address of the sector to be erased. The combination of A21, A20, A19, A18, A17,A16, and A15 will uniquely

select any sector.

4.RD = Data read from location RA during read operation.

PD = Data to be programmed at location PA. Data is latched on the falling edge of write pulse.

5.SPA = Sector group address to be protected. Set sector group address (SGA) and (A6, A1, A0) = (0, 1, 0).

SD = Sector group protection verify data. Output 01h at protected sector group addresses and output

00h at unprotected sector group addresses.

6.Both Read/Reset commands are functionally equivalent, resetting the device to the read mode.

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