MBR20200CT データシートの表示（PDF） - ON Semiconductor
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MBR20200CT Datasheet PDF : 5 Pages
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MBR20200CT
MAXIMUM RATINGS (Per Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
200
V
VRWM
VR
Average Rectified Forward Current (TC = 161°C)
Per Leg
IF(AV)
10
A
Per Package
20
Peak Repetitive Forward Current per Leg
(Square Wave, 20 kHz, TC = 158°C)
IFRM
20
A
Non−Repetitive Peak Surge Current
IFSM
150
A
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
IRRM
1.0
A
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature
TJ
−65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance,
Junction−to−Case
Maximum Thermal Resistance,
Junction−to−Ambient
Condition
Minimum Pad
Minimum Pad
Symbol
RqJC
RqJA
Value
2.0
60.0
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Per Leg)
Characteristic
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 10 A, TJ = 25°C)
(IF = 10 A, TJ = 125°C)
(IF = 20 A, TJ = 25°C)
(IF = 20 A, TJ = 125°C)
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
DYNAMIC CHARACTERISTICS (Per Leg)
Characteristic
Capacitance (VR = −5.0 V, TC = 25°C, Frequency = 1.0 MHz)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
Symbol Min
Typical
Max
Unit
VF
V
−
0.80
0.90
−
0.66
0.80
−
0.89
1.00
−
0.76
0.90
IR
mA
−
0.0002
1.0
−
0.4
50
Symbol
Value
Unit
CT
500
pF
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